Electron-beam-induced crystallization, growth, and purification by zone refining from the liquid phase of 1-micrometer-thick, narrow band-gap semiconducting alloys, eutectics, and semimetal layers require a high-vacuum noncontaminating environment. Experiments are proposed for investigating the process control parameters as a function of the energy density of electron beams, the solid-liquid interface geometry, thermal gradients, and propagation rates.
Electron-beam microzone refining of narrow band-gap semiconducting alloy layers
Aufsatz (Zeitschrift)
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