Till today, we are using conventional technologies for memory-related applications. However, as the size of the electronic devices are shrinking day by day, such conventional memory devices will not be compatible with emerging applications like artificial intelligence, cloud storage, data mining, Internet of Things, etc. After the coronavirus outburst, these technologies are more needed as now all work is online. Henceforth, high data storage and fast information processing is one of the vital requirements which is to be researched. So, the researchers are now approaching the new memory technologies such as resistive random access memory (RRAM) which is superior than conventional memory devices in terms of scalability, speed, power consumption, design structure and many more other advantages. With all the pros, RRAM also has some cons like higher level of variability and reliability issues. So, to discuss all these issues, we present the basics of RRAM, their advantages, applications and technological trends in this manuscript.


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    Titel :

    Resistive Random Access Memory: Materials, Filament Mechanism, Performance Parameters and Application


    Weitere Titelangaben:

    Lect. Notes Electrical Eng.


    Beteiligte:
    Dwivedi, Sanjeet (Herausgeber:in) / Singh, Sanjeev (Herausgeber:in) / Tiwari, Manish (Herausgeber:in) / Shrivastava, Ashish (Herausgeber:in) / Jain, Neeraj (Autor:in) / Kumawat, Renu (Autor:in) / Sharma, Shashi Kant (Autor:in)


    Erscheinungsdatum :

    2022-10-05


    Format / Umfang :

    11 pages





    Medientyp :

    Aufsatz/Kapitel (Buch)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch





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