A charge-based capacitance model of Tri-Gate Fin Field Effect Transistors (TG-FinFET) is revisited. and it elaborates the characteristics of the capacitance versus applied voltages. The tri-gate FinFETs considered here are undoped or lightly doped. By analyzing the inversion charge density and the equation of the drain current, trans-capacitances are derived. To predict the output and transfer characteristics of the transistor’s different parameters of the capacitance model are used. The model is verified by using 3D GENIUS VTCAD simulations.


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    Titel :

    A Charge-Based Capacitance Model for Tri-Gate FinFET


    Weitere Titelangaben:

    Lect. Notes Electrical Eng.


    Beteiligte:
    Dwivedi, Sanjeet (Herausgeber:in) / Singh, Sanjeev (Herausgeber:in) / Tiwari, Manish (Herausgeber:in) / Shrivastava, Ashish (Herausgeber:in) / Jyndiang, K. (Autor:in) / Bora, N. (Autor:in)


    Erscheinungsdatum :

    05.10.2022


    Format / Umfang :

    10 pages





    Medientyp :

    Aufsatz/Kapitel (Buch)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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