This paper presents the performance characteristics and reliability data of GaInAsP- and AlGaInP-based laser diodes emitting at the wavelengths from 650 to 1,300 nm. The lasers are grown by toxic-gas-free all-solid-source molecular beam epitaxy (SS-MBE).


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    Titel :

    High-power diode lasers grown by solid-source MBE


    Beteiligte:
    Pessa, Markus (Autor:in) / Jalonen, Marco U. (Autor:in) / Salokatve, Arto K. (Autor:in) / Savolainen, Pekka (Autor:in) / Toivonen, Mika (Autor:in) / Murison, Richard F. (Autor:in) / Panarello, Tullio (Autor:in) / Jansen, Michael (Autor:in) / Corvini, Pat (Autor:in)

    Kongress:

    In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II ; 1998 ; San Jose,CA,USA


    Erschienen in:

    Erscheinungsdatum :

    1998-04-07





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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