This paper presents the performance characteristics and reliability data of GaInAsP- and AlGaInP-based laser diodes emitting at the wavelengths from 650 to 1,300 nm. The lasers are grown by toxic-gas-free all-solid-source molecular beam epitaxy (SS-MBE).
High-power diode lasers grown by solid-source MBE
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II ; 1998 ; San Jose,CA,USA
Proc. SPIE ; 3284
1998-04-07
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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