This paper describes the essential elements for creating a practical wide bandwidth directly modulated laser source. This includes considerations of the intrinsic limitations of the laser structure, due to the resonant frequency and damping of the laser output, together with carrier transport issues to allow carriers in the device active region to be efficiently modulated at high speeds. the use of a P-doped compressively strained multiple-quantum well active region to provide high intrinsic speed and remove transport limitations is described, together with record setting results of 25 GHz modulation bandwidth for a 1.55 micrometer Fabry-Perot laser and 26 GHz bandwidth for a 1.55 micrometer DFB laser. The challenges of providing high bandwidth electrical connections to the laser on a suitable submount, together with fiber attachment and microwave packaging, are discussed. Results of fully packaged 1.55 micrometer DFB lasers with 25 Ghz modulation bandwidth are shown. Digital modulation of the packaged 1.55 micrometer DFB including impedance matching is described, and the transient wavelength chirp is presented. This low chirp is reduced further using an optical filter, to provide a 10 GBit/s source with chirp similar to that of an external electroabsorption modulator.
Ultrawide bandwidth 1.55-um lasers
High-Speed Semiconductor Laser Sources ; 1996 ; San Jose,CA,United States
Proc. SPIE ; 2684
1996-04-01
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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