A thin two-side polished silicon etalon is demonstrated as a fixed-wavelength intracavity selector for the far-infrared p-Ge laser. The active cavity finesse is ~ 0.1. The wavelength position and spectral purity are maintained over a wide range of laser operating fields. A p-Ge laser with such a selector may find application in chemical sensing, THz imaging, or non-destructive testing.


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    Titel :

    Fixed wavelength selection for the far-infrared p-Ge laser using thin silicon intracavity etalon


    Beteiligte:

    Kongress:

    Solid State Lasers XII ; 2003 ; San Jose,CA,United States


    Erschienen in:

    Erscheinungsdatum :

    2003-06-17





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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