A thin two-side polished silicon etalon is demonstrated as a fixed-wavelength intracavity selector for the far-infrared p-Ge laser. The active cavity finesse is ~ 0.1. The wavelength position and spectral purity are maintained over a wide range of laser operating fields. A p-Ge laser with such a selector may find application in chemical sensing, THz imaging, or non-destructive testing.
Fixed wavelength selection for the far-infrared p-Ge laser using thin silicon intracavity etalon
Solid State Lasers XII ; 2003 ; San Jose,CA,United States
Proc. SPIE ; 4968
2003-06-17
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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