This paper, the electron irradiation-induced defects in undoped InP has undergone a high-temperature annealing in iron phosphide ambience. The positron annihilation lifetime spectroscopy (PAL) and thermally stimulated current spectroscopy (TSC) have been employed to study it . The results proved that, the defects in SI-InP after electron irradiation increases and the complex defects are formed . The positron mean lifetime increases about 18 ps , and more defect peaks are also found in the TSC after irradiation.


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    Titel :

    Defects in undoped semi-insulating InP


    Beteiligte:
    Chen, Yan (Autor:in) / Guo, Xin (Autor:in)

    Kongress:

    Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013 ; 2013 ; SuZhou,China


    Erschienen in:

    Erscheinungsdatum :

    2014-02-21





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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