This paper, the electron irradiation-induced defects in undoped InP has undergone a high-temperature annealing in iron phosphide ambience. The positron annihilation lifetime spectroscopy (PAL) and thermally stimulated current spectroscopy (TSC) have been employed to study it . The results proved that, the defects in SI-InP after electron irradiation increases and the complex defects are formed . The positron mean lifetime increases about 18 ps , and more defect peaks are also found in the TSC after irradiation.
Defects in undoped semi-insulating InP
Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013 ; 2013 ; SuZhou,China
Proc. SPIE ; 9142
2014-02-21
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Defects in undoped semi-insulating InP [9142-111]
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