Single-frequency grating outcoupled surface emitting (GSE) semiconductor lasers emitting at 1310 nm with output powers exceeding 5.25 mW into a multi-mode fiber, threshold currents below 13 mA and with > 30 dB side-mode suppression ratios are reported. These lasers consist of a 400 μm long horizontal cavity, and a 15 μm long second-order outcoupler grating sandwiched between 200 μm long first-order distributed Bragg reflector (DBRs) gratings. Higher output powers can be achieved with longer outcoupler gratings. These GSE lasers operate at 3.125 Gbps and have a full-width at half-maximum (FWHM) beam divergence of 5 x 12 degrees.
1310-nm single-mode grating-outcoupled surface-emitting semiconductor lasers with a detuned second-order grating
Semiconductor Lasers and Laser Dynamics ; 2004 ; Strasbourg,France
Proc. SPIE ; 5452
2004-09-01
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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