CuSbS2 is a promising compound semiconductor for the thin film heterojunction solar cell absorber layer. The chemical spray pyrolysis technique is adopted to fabricate CuSbS2 thin film solar cells. The aqueous solution is sprayed over the soda-lime glass substrates at a constant spray rate of 10 ml/min. The films are obtained at the optimum substrate temperature of 260 °C. The thin films' of XRD spectra reveal the polycrystalline nature of the chalcostibite structure of CuSbS2, with lattice parameters of a = 0.600 nm, b = 0.380 nm, and c = 1.445 nm respectively. Micro-Raman spectra also confirm the CuSbS2 crystal phase. The optical band gap of these films is found to be 1.44 eV, which is close to the optimum band gap for maximal conversion efficiency. The optical absorption coefficient of these films is ≥ 104 cm-1. These films are found to be p-type. Finally, work on fabricating a conventional thin film heterojunction solar cell is undertaken. CuSbS2 thin film solar cell is prepared in substrate configuration in the sequence of Mo-glass/CuSbS2/CdS/Au. The fabricated solar cell exhibited an open circuit voltage and short circuit current of 141 mV and 1.62 mA/cm2 respectively.
Fabrication of CuSbS2 Thin Film Solar Cells by Using Chemical Spray Pyrolysis
Sae Technical Papers
International Conference on Advances in Design, Materials, Manufacturing and Surface Engineering for Mobility ; 2022
2022-12-23
Aufsatz (Konferenz)
Englisch
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