The theory of silicon temperature sensor and the design of a planar sensing chip are discussed. The temperature-resistance function is essentially logarithmic with a TCR of 0.7%/°C near room temperature. Nominal, polarity-independent resistance values (@ 25°C) from 100 to 5000 ohms are attainable; the discussion, however, will be restricted to 1.0 and 3.3 K ohm devices. Resistance-temperature characteristics of planar silicon sensors are compared to those of currently available metal-wire sensors and thermistors. Due to the small size of the actual sensing chip (15 x 15 x 6 mil3) the heat-transfer characteristics of the sensor are determined almost entirely by the packaging configuration; thermal response and dissipation data are presented for an axial-lead glass diode package and a plastic (SilectT) transistor package and comparison is made with the characteristics of conventional silicon sensors. The use of the silicon sensor in automotive applications is briefly discussed.T - trademark of Texas Instruments Incorporated


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    Titel :

    Planar Semiconductor Temperature Sensor for Automotive Applications


    Weitere Titelangaben:

    Sae Technical Papers


    Beteiligte:
    McIntire, J. G. (Autor:in) / Wiemer, K. C. (Autor:in) / Tribble, S. J. (Autor:in) / Bialek, T. (Autor:in) / Matzen, W. T. (Autor:in)

    Kongress:

    1977 International Automotive Engineering Congress and Exposition ; 1977



    Erscheinungsdatum :

    01.02.1977




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Planar Semiconductor Temperature Sensor for Automotive Applications

    Wiemer,K.C. / Matzen,W.T. / Tribble,S.J. et al. | Kraftfahrwesen | 1977


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    Dunn, W. | Tema Archiv | 1990


    Planar Gas Discharge Displays for Automotive Applications

    Cornell, Paul J. | SAE Technical Papers | 1977



    Semiconductor technologies for automotive applications

    Stelzer, J. / Associazione Tecnica dell'Automobile | British Library Conference Proceedings | 1999