A new graphic-type FIP® (Fluorescent Indicator Panel) combines conventional FIP elements with a poly-Si thin-film transistor (TFT) active matrix (AM). The matrix is capable of incorporating memory function in each picture element to drive the phosphor in static mode.A prototype device with 24 x 24 picture elements in a 12 x 12 mm size shows brightness levels exceeding 200 fL (600 cd/m2) at a 25-volt driving voltage. Its characteristics are stable after the sealing process at 450°C for about 30 minutes. With continuing improvement, this device will be available as a terminal display in an automotive navigation system.


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    Titel :

    Poly-Si TFT Active Matrix Fluorescent Indicator Panel


    Weitere Titelangaben:

    Sae Technical Papers


    Beteiligte:
    Okumura, F. (Autor:in) / Asada, H. (Autor:in) / Saeki, H. (Autor:in) / Yamamoto, J. (Autor:in) / Sera, K. (Autor:in) / Kaneko, S. (Autor:in) / Akiyama, T. (Autor:in)

    Kongress:

    International Congress & Exposition ; 1991



    Erscheinungsdatum :

    01.02.1991




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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