A 60GHz millimeter-wave signal source for automotive radar was developed with MMICs. This signal source consists of two MMICs; a 30GHz VCO and a 30GHz-to-60GHz frequency doubler. For the transistor of these MMICs, we used the InAIAs/InGaAs on InP pseudomorphic HEMT with a 0.5μm gate length. Because of the high electron mobility and the high sheet charge density, the HEMT performed with sufficient output power gain in the millimeter-wave frequency range. The oscillation frequency of the signal source was controlled from 58.403GHz to 59.373GHz linearly. These frequency characteristics will satisfy the specifications of the FMCW radar system.
Automotive Radar Signal Source Using InP Based MMICs
Sae Technical Papers
SAE International Congress and Exposition ; 1997
24.02.1997
Aufsatz (Konferenz)
Englisch
Mobility , Transistors , Radar
Automotive radar signal source using InP based MMICs
Kraftfahrwesen | 1997
|Automotive Radar Signal Source Using InP Based MMICs
British Library Conference Proceedings | 1997
|MMICs for automotive radar applications
Tema Archiv | 1996
|Advanced silicon MMICs for mm-wave automotive radar front-ends
GWLB - Gottfried Wilhelm Leibniz Bibliothek | 2015
|Advanced silicon MMICs for mm-wave automotive radar front-ends
TIBKAT | 2015
|