This paper demonstrates that the on-resistance of a power MOSFET decreases significantly when the operating temperature decreases. The decrease in on-resistance under cryogenic temperature allows the device to operate at a much higher power and current condition. Also, it is demonstrated that the MOSFET device can be effectively kept at cryogenic temperature by spray cooling with liquid nitrogen. Over 80 W of heat generated can be removed continuously with spray cooling.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Performance Characteristics of MOSFETs Operating at High Power


    Weitere Titelangaben:

    Sae Technical Papers


    Beteiligte:
    Sundaram, K. B. (Autor:in) / Chow, L. C. (Autor:in) / Lin, Y. R. (Autor:in)

    Kongress:

    Power Systems Conference ; 2000



    Erscheinungsdatum :

    2000-10-31




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Performance Characteristics of MOSFETs Operating at High Power

    Lin, Y. R. / Sundaram, K. B. / Chow, L. C. et al. | British Library Conference Proceedings | 2000


    Automotive MOSFETs Operating in the Safe Operating Area

    Puerschel, Marco / Kiep, Andreas / Spielman, Chris | British Library Conference Proceedings | 2015


    Automotive MOSFETs Operating in the Safe Operating Area

    Kiep, Andreas / Spielman, Chris / Puerschel, Marco | SAE Technical Papers | 2015


    Automotive MOSFETs operating in the safe operating area

    Puerschel,M. / Kiep,A. / Spielman,C. et al. | Kraftfahrwesen | 2015


    Manufacturability of high frequency power MOSFETs

    Hess, G.T. / Lee, S. / Sanders, T.J. et al. | Tema Archiv | 1997