The modern day power MOSFET is constructed using the latest technology in order to minimize the drain source resistance. The latest MOSFET technologies are capable of achieving the same drain to source resistance with a smaller MOSFET die than previous generations which will directly lead to increased thermal resistance and limited energy handling capability. This paper will discuss the Safe Operating Area of power MOSFETs and how to assess new MOSFET technology.


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    Titel :

    Automotive MOSFETs Operating in the Safe Operating Area


    Weitere Titelangaben:

    Sae Technical Papers


    Beteiligte:
    Kiep, Andreas (Autor:in) / Spielman, Chris (Autor:in) / Puerschel, Marco (Autor:in)

    Kongress:

    SAE 2015 World Congress & Exhibition ; 2015



    Erscheinungsdatum :

    2015-04-14




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch


    Schlagwörter :


    Automotive MOSFETs operating in the safe operating area

    Puerschel,M. / Kiep,A. / Spielman,C. et al. | Kraftfahrwesen | 2015


    Automotive MOSFETs Operating in the Safe Operating Area

    Puerschel, Marco / Kiep, Andreas / Spielman, Chris | British Library Conference Proceedings | 2015



    "Ldmos Safe Operating Area - System and Application Needs"

    Hower, P. / VDE/VDI Society Microelectronics | British Library Conference Proceedings | 2000


    AUTOMOTIVE OPERATING SYSTEM

    HUWER WOJCIECH | Europäisches Patentamt | 2021

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