Until now, environmental and cost concerns have inhibited widespread application of piezoresistive pressure transducers in many applications. The monolithic silicon pressure sensor, unlike a conventional I C, must interface with the environment.The circuit side of the sensor chip is protected from the environment in the integrated pressure transducer (IPT).The entire circuit, including high level amplification and temperature compensation, is placed on a chip only 0.1″ square. It has built-in trim capability via thin film resistors and is contained in a package de signed for low cost processing.


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    Titel :

    Totally Integrated Pressure Transducer


    Weitere Titelangaben:

    Sae Technical Papers


    Beteiligte:
    Wamstad, D.B. (Autor:in) / Bicking, R. E. (Autor:in) / Johnson, R. L. (Autor:in)

    Kongress:

    SAE International Congress and Exposition ; 1981



    Erscheinungsdatum :

    1981-02-01




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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