In order to take full advantage of SiC, a high temperature package for power module using SiC devices was designed, developed, fabricated and tested. The details of the material selection and fabrication process are described. High temperature reliability test and power test shows that the package presented in this paper can perform well at the high junction temperature.


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    Titel :

    250 °C SiC Power Module Package Design


    Weitere Titelangaben:

    Sae Technical Papers


    Beteiligte:
    Huff, Daniel (Autor:in) / Wang, Fred (Autor:in) / Ngo, Khai D. T. (Autor:in) / Ning, Puqi (Autor:in) / Lai, Rixin (Autor:in)

    Kongress:

    Power Systems Conference ; 2008



    Erscheinungsdatum :

    2008-11-11




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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