A fundamental knowledge of solid-state physics is used to gain understanding of the two basic active solidstate devices-bipolar and field-effect transistors. The bipolar transistor is treated as two junctions communicating through a common region (the base). The functions of charge injection and collection are studied and developed to explain the observed static (d-c) volt-ampere characteristics. Major bipolar-transistor parameters are then reviewed. Finally, the limitations in gain, voltage, and power are discussed. There are basically two forms of field-effect transistors: the junction field effect transistor (JFET) and the metal oxide semiconductor (MOS). Both forms use a voltage applied to a gate electrode or region to control charge (current) flow between source and drain terminals. This action is studied and used to to develop the observed state (d-c) volt-ampere characteristic. The major field-effect transistor parameters are then reviewed. Finally, the limitations in gain, voltage, and power are discussed. Included in the appendixes is a brief review of transistor evolution, which serves as an introduction to device processing information, and an introduction to some of the lesser known solid-state devices. A third appendix explains thermal resistance.


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    Titel :

    Discrete Solid-State Devices


    Weitere Titelangaben:

    Sae Technical Papers


    Beteiligte:

    Kongress:

    1974 Automotive Engineering Congress and Exposition ; 1974



    Erscheinungsdatum :

    1974-02-01




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Discrete Solid-State Devices

    Olmstead,J.A. / RCA Lab.,Solid State Technol.Cent.,Somerville,US | Kraftfahrwesen | 1974


    Integrated Solid-State Devices

    Wheatley,C.F. / RCA Lab.,Solid State Technol.Cent.Somerville,US | Kraftfahrwesen | 1974


    Integrated Solid-State Devices

    Wheatley, C. Frank | SAE Technical Papers | 1974


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    Glass for Solid State Devices

    Bailey, R. F. | NTRS | 1982