A fundamental knowledge of solid-state physics is used to gain understanding of the two basic active solidstate devices-bipolar and field-effect transistors. The bipolar transistor is treated as two junctions communicating through a common region (the base). The functions of charge injection and collection are studied and developed to explain the observed static (d-c) volt-ampere characteristics. Major bipolar-transistor parameters are then reviewed. Finally, the limitations in gain, voltage, and power are discussed. There are basically two forms of field-effect transistors: the junction field effect transistor (JFET) and the metal oxide semiconductor (MOS). Both forms use a voltage applied to a gate electrode or region to control charge (current) flow between source and drain terminals. This action is studied and used to to develop the observed state (d-c) volt-ampere characteristic. The major field-effect transistor parameters are then reviewed. Finally, the limitations in gain, voltage, and power are discussed. Included in the appendixes is a brief review of transistor evolution, which serves as an introduction to device processing information, and an introduction to some of the lesser known solid-state devices. A third appendix explains thermal resistance.
Discrete Solid-State Devices
Sae Technical Papers
1974 Automotive Engineering Congress and Exposition ; 1974
1974-02-01
Aufsatz (Konferenz)
Englisch
Kraftfahrwesen | 1974
|Integrated Solid-State Devices
Kraftfahrwesen | 1974
|Integrated Solid-State Devices
SAE Technical Papers | 1974
|TIBKAT | 2022
|NTRS | 1982
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