To improve the photovoltaic properties of Cu2ZnSnS4 (CZTS) cells, we investigated the effect of both the thickness of the deposited CdS layers and the post-annealing temperature following CdS deposition on the photovoltaic properties of CZTS cells using a two-layer CZTS structure. By depositing a thin CdS layer (40nm) followed by high temperature annealing (603K), we observed a remarkable increase in the short-circuit current density because of the enhancement of the external quantum efficiency in the wavelength range of 400-800nm. The best CZTS cell exhibited a conversion efficiency of 9.4% in the active area (9.1% in the designated area). In addition, we also fabricated a CZTS cell with open-circuit voltage of 0.80V by appropriately tuning the composition of the CZTS layers. Copyright © 2016 John Wiley & Sons, Ltd.


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    Titel :

    Cu2ZnSnS4 photovoltaic cell with improved efficiency fabricated by high-temperature annealing after CdS buffer-layer deposition



    Erschienen in:

    Erscheinungsdatum :

    2017




    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch


    Klassifikation :

    BKL:    53.36 Energiedirektumwandler, elektrische Energiespeicher