To improve the photovoltaic properties of Cu2ZnSnS4 (CZTS) cells, we investigated the effect of both the thickness of the deposited CdS layers and the post-annealing temperature following CdS deposition on the photovoltaic properties of CZTS cells using a two-layer CZTS structure. By depositing a thin CdS layer (40nm) followed by high temperature annealing (603K), we observed a remarkable increase in the short-circuit current density because of the enhancement of the external quantum efficiency in the wavelength range of 400-800nm. The best CZTS cell exhibited a conversion efficiency of 9.4% in the active area (9.1% in the designated area). In addition, we also fabricated a CZTS cell with open-circuit voltage of 0.80V by appropriately tuning the composition of the CZTS layers. Copyright © 2016 John Wiley & Sons, Ltd.
Cu2ZnSnS4 photovoltaic cell with improved efficiency fabricated by high-temperature annealing after CdS buffer-layer deposition
Progress in photovoltaics ; 25 , 1
2017
Aufsatz (Zeitschrift)
Englisch
BKL: | 53.36 Energiedirektumwandler, elektrische Energiespeicher |
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