Fabrication of high‐quality ultrathin monocrystalline silicon layers and their transfer to low‐cost substrates are key steps for flexible electronics and photovoltaics. In this work, we demonstrate a low‐temperature and low‐cost process for ultrathin silicon solar cells. By using standard plasma‐enhanced chemical vapor deposition (PECVD), we grow high‐quality epitaxial silicon layers (epi‐PECVD) from SiH 4 /H 2 gas mixtures at 175 °C. Using secondary ion mass spectrometry and transmission electron microscopy, we show that the porosity of the epi‐PECVD/crystalline silicon interface can be tuned by controlling the hydrogen accumulation there. Moreover, we demonstrate that 13–14% porosity is a threshold above which the interface becomes fragile and can easily be cleaved. Taking advantage of the H‐rich interface fragility, we demonstrate the transfer of large areas (∽10 cm 2 ) ultrathin epi‐PECVD layers (0.5–5.5 µm) onto glass substrates by anodic bonding and moderate annealing (275–350 °C). The structural properties of transferred layers are assessed, and the first PECVD epitaxial silicon solar cells transferred on glass are characterized. Copyright © 2016 John Wiley & Sons, Ltd. In this work, we demonstrate a low‐temperature and low‐cost process for ultrathin silicon solar cells. Taking advantage of the H‐rich interfaces fragility, we demonstrate the transfer of large areas (∽10 cm 2 ) ultrathin epitaxial plasma‐enhanced chemical vapor deposition (PECVD) layers (0.5–5.5 µm) onto a glass substrate by anodic bonding and moderate annealing (3 min–350 °C). The structural properties of transferred layers are assessed, and the first PECVD epitaxial silicon solar cells transferred on glass are characterized.
Ultrathin PECVD epitaxial Si solar cells on glass via low‐temperature transfer process
Progress in photovoltaics ; 24 , 8 ; 1075-1084
2016
Aufsatz (Zeitschrift)
Englisch
Si thin film , low-temperature , epitaxy , PECVD , transfer , solar cells
BKL: | 53.36 Energiedirektumwandler, elektrische Energiespeicher |
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