We fabricate thin epitaxial crystal silicon solar cells on display glass and fused silica substrates overcoated with a silicon seed layer. To confirm the quality of hot‐wire chemical vapor deposition epitaxy, we grow a 2‐µm‐thick absorber on a (100) monocrystalline Si layer transfer seed on display glass and achieve 6.5% efficiency with an open circuit voltage (V OC ) of 586 mV without light‐trapping features. This device enables the evaluation of seed layers on display glass. Using polycrystalline seeds formed from amorphous silicon by laser‐induced mixed phase solidification (MPS) and electron beam crystallization, we demonstrate 2.9%, 476 mV (MPS) and 4.1%, 551 mV (electron beam crystallization) solar cells. Grain boundaries likely limit the solar cell grown on the MPS seed layer, and we establish an upper bound for the grain boundary recombination velocity ( S GB ) of 1.6x10 4  cm/s. Copyright © 2014 John Wiley & Sons, Ltd. We fabricate and compare thin epitaxial crystal silicon solar cells on glass using three silicon seed layers to initiate epitaxy. With a single crystal seed, a 586‐mV, 6.5% solar cell establishes the quality of the epitaxy process. Lower efficiencies are achieved with polycrystalline seeds formed by mixed‐phase solidification (2.9%, 476‐mV) and electron beam crystallization (4.1%, 551‐mV), indicating the importance of a high quality seed layer.


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    Titel :

    Comparison of thin epitaxial film silicon photovoltaics fabricated on monocrystalline and polycrystalline seed layers on glass



    Erschienen in:

    Progress in photovoltaics ; 23 , 7 ; 909-917


    Erscheinungsdatum :

    2015




    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch


    Schlagwörter :

    Klassifikation :

    BKL:    53.36 Energiedirektumwandler, elektrische Energiespeicher