We report on improving the performance of pin‐type a‐Si:H/a‐SiGe:H/µc‐Si:H triple‐junction solar cells and corresponding single‐junction solar cells in this paper. Based on wet‐etching sputtered aluminum‐doped zinc oxide (ZnO:Al) substrates with optimized surface morphologies and photo‐electrical material properties, after adjusting individual single‐junction solar cells utilized in triple‐junction solar cells with various optimization techniques, we pay close attention to the optimization of tunnel recombination junctions (TRJs). By means of the optimization of individual a‐Si:H/a‐SiGe:H and a‐SiGe:H/µc‐Si:H double‐junction solar cells, we compensated for the open circuit voltage ( V oc ) loss at the a‐Si:H/a‐SiGe:H TRJ by adopting a p‐type µc‐Si:H layer with a low activation energy. By combining the optimized single‐junction solar cells and top/middle, middle/bottom TRJs with little electrical losses, an initial efficiency of 15.06% was achieved for pin‐type a‐Si:H/a‐SiGe:H/µc‐Si:H triple‐junction solar cells. Copyright © 2014 John Wiley & Sons, Ltd. A procedure for clarifying the origin of V oc loss in a‐Si:H/a‐SiGe:H/µc‐Si:H triple‐junction solar cells is proposed. By dividing the triple‐junction solar cell into a‐Si:H/a‐SiGe:H and a‐SiGe:H/µc‐Si:H component cells and fabricating corresponding double‐junction solar cells, the V oc loss was found and compensated for by adopting a p‐type µc‐Si:H layer with a low activation energy. An initial efficiency of 15.06% was achieved for pin‐type a‐Si:H/a‐SiGe:H/µc‐Si:H triple‐junction solar cells with an active area of 0.253 cm 2 .


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    Titel :

    High efficiency triple junction thin film silicon solar cells with optimized electrical structure



    Erschienen in:

    Progress in photovoltaics ; 23 , 10 ; 1313-1322


    Erscheinungsdatum :

    2015




    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch



    Klassifikation :

    BKL:    53.36 Energiedirektumwandler, elektrische Energiespeicher