This work demonstrates the high potential of Al 2 O 3 passivated black silicon in high‐efficiency interdigitated back contacted (IBC) solar cells by reducing surface reflectance without jeopardizing surface passivation. Very low reflectance values, below 0.7% in the 300–1000 nm wavelength range, together with striking surface recombination velocities values of 17 and 5 cm/s on p‐type and n‐type crystalline silicon substrates, respectively, are reached. The simultaneous fulfillment of requirements, low reflectance and low surface recombination, paves the way for the fabrication of high‐efficiency IBC Si solar cells using black silicon at their front surface. Outstanding photovoltaic efficiencies over 22% have been achieved both in p‐type and n‐type 9‐cm 2 cells. 3D simulations suggest that efficiencies of up to 24% can be obtained in the future with minor modifications in the baseline fabrication process. Copyright © 2015 John Wiley & Sons, Ltd. This work demonstrates the high potential of Al 2 O 3 passivated black silicon in high‐efficiency interdigitated back contacted solar cells by reducing the reflectance without jeopardizing surface passivation. Very low reflectance values, below 0.7% in the 300‐ to 1000‐nm wavelength range, together with striking surface recombination velocities values of 17 and 5 cm/s on p‐type and n‐type crystalline silicon substrates, respectively, are reached. Outstanding photovoltaic efficiencies over 22% have been achieved both in p‐type and n‐type 9‐cm 2 cells.


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    Titel :

    High‐efficiency black silicon interdigitated back contacted solar cells on p‐type and n‐type c‐Si substrates



    Erschienen in:

    Progress in photovoltaics ; 23 , 11 ; 1448-1457


    Erscheinungsdatum :

    2015




    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch



    Klassifikation :

    BKL:    53.36 Energiedirektumwandler, elektrische Energiespeicher




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