Very low surface recombination velocity of crystalline silicon passivated by phosphorus-doped a-SicxNy:H(n) alloys
Progress in photovoltaics ; 16 , 2
2008
Aufsatz (Zeitschrift)
Unbekannt
BKL: | 53.36 Energiedirektumwandler, elektrische Energiespeicher |
Point contact openings in surface passivated macroporous silicon layers
Online Contents | 2012
|