Deep defect determination by the constant photocurrent method (CPM) in annealed or light soaked amorphous hydrogenated silicon (a-Si: H)
Solar energy materials & solar cells ; 34 , 1-4 ; 533-540
1994
Aufsatz (Zeitschrift)
Englisch
Light-induced defects in thermal annealed hydrogenated amorphous silicon
Online Contents | 1993
|Comparative study of defect states in light-soaked and high-temperature-annealed a-Si: H
Online Contents | 1997
|Light management in hydrogenated amorphous silicon germanium solar cells
Online Contents | 2014
|Light-induced defects in hydrogenated amorphous silicon germanium alloys
Online Contents | 2003
|