High-purity epitaxial silicon doped with antimony made by chemical vapor deposition, using antimony pentachloride (SbCI5) as source of dopant and SiH4, SiCI2H2, or another conventional source of silicon. High purity achieved in layers of arbitrary thickness. Epitaxial silicon doped with antimony needed to fabricate impurity-band-conduction photodetectors operating at wavelengths from 2.5 to 40 micrometers.


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    Titel :

    Epitaxial Silicon Doped With Antimony


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    1996-03-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :



    BIB Photodetectors Based on Antimony Doped Silicon

    Sirmain, G. | British Library Online Contents | 1992