Improved deposition process to grows thin layers of silicon carbide having chosen crystalline structures. Process incorporated into sequences of deposition and etching steps used to fabricate silicon-carbide-based semiconductor devices. Important advance because silicon carbide emerging as superior semiconductor for devices operating under conditions of high power, high temperature, and/or high frequency. Furthermore, various crystalline structures of SiC have different electronic properties, each suited to specific application.


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    Titel :

    Controlled Thin-Film Growth Of Silicon Carbide Polytypes


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    01.05.1995



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :