Improved design for reading gate of vertical-Bloch-line magnetic-bubble memory increases reliability of discrimination between binary ones and zeros. Magnetic bubbles that signify binary "1" and "0" produced by applying sufficiently large chopping currents to memory stripes. Bubbles then propagated differentially in bubble sorter. Method of discriminating between ones and zeros more reliable.
Improved Reading Gate For Vertical-Bloch-Line Memory
NASA Tech Briefs ; 18 , 9
1994-09-01
Sonstige
Keine Angabe
Englisch
Improved Reading Gate for Vertical-Bloch-Line Memory
Online Contents | 1994
NTRS | 1993
|Three-Dimensional Vertical-Bloch-Line Memory System
Online Contents | 1994
Three-Dimensional Vertical-Bloch-Line Memory System
NTRS | 1994
|Half-State Readout In Vertical-Bloch-Line Memory
NTRS | 1994
|