For readout, memory cells addressed via on-chip semiconductor lasers. Proposed thin-film ferroelectric memory device features nonvolatile storage, optically addressable, nondestructive readout (NDRO) with fast access, and low vulnerability to damage by ionizing radiation. Polarization switched during recording and erasure, but not during readout. As result, readout would not destroy contents of memory, and operating life in specific "read-intensive" applications increased up to estimated 10 to the 16th power cycles.


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    Titel :

    Optically Addressable, Ferroelectric Memory With NDRO


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    01.03.1994



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch





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