Directed beams of single oxygen atoms having kinetic energies between 1 and 5 eV used in anisotropic etching of oxygen-labile photoresist patterns on silicon wafers. Key step in manufacturing integrated circuits on semiconductor wafers. Damage to semiconductor material under photoresist layer reduced or eliminated. Method incorporated into lithographic processes for fabrication of integrated circuits.


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    Titel :

    Energetic Atoms Would Etch Photoresists Anisotropically


    Beteiligte:
    Koontz, Steven (Autor:in) / Cross, Jon (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1993-02-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :


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