Barrier/n/n+ (BNN+) varactor diodes developed as frequency multipliers at millimeter and submillimeter wavelengths. Devices required to serve as frequency triplers or quintuplers to provide powers of order of milliwatts at frequencies from 0.1 THz to about 1 THz. Feature Mott or heterojunction barriers and back-to-back diode configuration, which make it possible to obtain symmetrical capacitance-versus-voltage characteristics with high ratio between maximum and minimum capacitances. Extension of barrier/intrinsic/n+ (BIN+) concept described in "BIN Diode for Submillimeter Wavelengths" (NPO-17258).


    Zugriff

    Zugriff über TIB

    Verfügbarkeit in meiner Bibliothek prüfen


    Exportieren, teilen und zitieren



    Titel :

    Barrier/n/n+ Varactor Frequency Multipliers


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    01.08.1992



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




    Back-To-Back Barrier Varactor Frequency Multipliers

    Choudhury, Debabani / Smith, R. Peter / Martin, Suzanne C. et al. | NTRS | 1995



    Study of quasi-optical circuit techniques in varactor multipliers

    Taub, Jesse J. / Kurpis, Gediminas P. | TIBKAT | 1969


    Design considerations for heavily-doped cryogenic Schottky diode varactor multipliers.

    Mehdi, I. / Martin, S. / Chattopadhyay, G. et al. | NTRS | 2001


    A 300-GHz heterostructure barrier varactor (HBV) frequency septupler

    Qun Xiao, / Hesler, J.L. / Yiwei Duan, et al. | IEEE | 2005