Report presents results of experiments where multiple-bit errors were induced in 256-kbit commercial integrated-circuit dynamic random-access memory (DRAM) by variety of normally incident heavy ions. Idea demonstrates utility of DRAM and methods used to analyze experimental data, with view towards applying methods and data to other digital integrated circuits.
Responses Of A DRAM To Energetic Heavy Ions
NASA Tech Briefs ; 16 , 4
01.04.1992
Sonstige
Keine Angabe
Englisch
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