Solid-state lasers of new type contain pseudomorphic In0.15Ga0.85As single-quantum-well (SQW) active layers sandwiched between thinner layers of GaAs that, in turn, are sandwiched between graded-index-of-refraction separate-confinement-heterostructure (GRINSCH) layers of AlxGa1-xAs. Lasers emit edgewise as other solid-state lasers, or made to emit perpendicularly to their surfaces by use of integrated 45 degree beam deflectors that deflect edge-emitted light. Suitable for incorporation into optoelectronic integrated circuits implementing optical interconnection and parallel processing of data.


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    Titel :

    Pseudomorphic InxGa1-xAs Surface-Emitting Lasers


    Beteiligte:
    Kim, Jae H. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.03.1992



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




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