New metal-oxide-semiconductor field-effect transistors designed for source-follower preamplifiers operating at liquid-helium temperatures in conjunction with infrared detectors. Lower thresholds and offset give CryoFET's greater dynamic range and linearity than conventional MOSFET's at low temperatures and facilitates pair balancing to reduce offsets in output. Reduces heat loading of cryogenic system, extending life, reliability, and performance of cryogenic infrared instruments.


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    Titel :

    FET's Perform Well At Cryogenic Temperatures


    Beteiligte:
    Sclar, N. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.02.1992



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




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