New low-temperature procedure used to deposit ohmic gold contacts on gallium arsenide epitaxial films, forming ohmic electrical contacts. Keeping wafer in vacuum until metallization prevents formation of rectifying contacts.


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    Titel :

    Formation Of Ohmic Gold Contacts On Epitaxial GaAs


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    1991-03-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :


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