High quantum efficiency achieved without multiple layer contacts. Proposed infrared sensor based on photoemission from multiple layers of metal silicide sandwiched between layers of silicon. Suitable for use in focal-plane arrays. Layered internal-photoemission sensor has positive/intrinsic/negative structure modified by inclusion of layers or islands of metal silicide. Holes photo-excited from silicide regions and swept to detection by reverse-bias electric field in intrinsic silicon. Easier to make because internal layers allowed to "float" electrically, contact being made with only two outer semiconductor layers.


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    Titel :

    Layered Internal-Photoemission Sensor


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    1990-05-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch