Beam of low-energy negative oxygen ions used to grow layer of silicon dioxide on silicon. Beam unique both in purity, contains no molecular oxygen or other charged species, and in low energy, which is insufficient to damage silicon by physically displacing atoms. Low-energy growth accomplished with help of ion-beam apparatus. Directs electrons into crosswise stream of gas, generating stream of negative ions. Pair of charged plates separates ions from accompanying electrons and diverts ion beam to target - silicon substrate. Diameter of beam at target 0.5 to 0.75 cm. Promises useful device to study oxidation of semiconductors and, in certain applications, to replace conventional oxidation processes.


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    Titel :

    Variable-Energy Ion Beams For Modification Of Surfaces


    Beteiligte:
    Chutjian, Ara (Autor:in) / Hecht, Michael H. (Autor:in) / Orient, Otto J. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.05.1989



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :


    Electrochromic Variable-Emissivity Surfaces

    Rauh, R. David / Cogan, Stuart F. | NTRS | 1988



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