Proposed high-performance spatial light modulator consists of multiple-quantum-well, strain-layer superlattice similar to one described in accompanying article, "Strain-Layer-Superlattice Light Modulator" (NPO-16915). Device differs from other one, operates in transmission rather than in resonant reflection and therefore includes only one stack of GaAs/InAs layers having total thickness less than penetration depth (1 to 2 micrometer) of optical modulating signal. Alternating, semitransparent semiconductor layers contain space-charge barriers forming quantum wells. Modulating light (with photon energy greater than semiconductor band gap) induces photovoltaic action, which affects transmission of modulated light (having photon energy less than band gap).


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    Titel :

    Photovoltaic-Driven Multiple-Quantum-Well Modulator


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    01.05.1989



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :



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