Parallel lasers interact in shared space to alter output wavelength. New device consists of two stripe lasers in aluminum gallium arsenide chip. Parallel stripes close enough so light from lower laser coupled into upper laser and vice versa. Lasers operated by low-duty-cycle current pulses. Lasing threshold of each about 100 mA. Currents controlled independently. Useful in optical communications systems employing wavelength-division multiplexing.


    Zugriff

    Zugriff über TIB

    Verfügbarkeit in meiner Bibliothek prüfen


    Exportieren, teilen und zitieren



    Titel :

    Tunable Dual Semiconductor Laser


    Beteiligte:
    Mukai, Seiji (Autor:in) / Kapon, Eli (Autor:in) / Katz, Joseph (Autor:in) / Margalit, Shlomo (Autor:in) / Yariv, Amnon (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.11.1987



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch





    Generation of Tunable, Dual-Wavelength Picosecond Pulses from a Mode-Locked Semiconductor Fiber Ring Laser

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004




    Mode competition in wide-range tunable dual-wavelength semiconductor laser using nonidentical InGaAsP quantum wells

    Huang, C.-C. / Cheng, C.-H. / Su, Y.-S. et al. | British Library Conference Proceedings | 2003