Study seeks ways to build transistors that function effectively at liquid-helium temperatures. Report discusses physics of metaloxide/semiconductor field-effect transistors (MOSFET's) and performances of these devices at cryogenic temperatures. MOSFET's useful in highly sensitive cryogenic preamplifiers for infrared astronomy.


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    Titel :

    MOSFET's for Cryogenic Amplifiers


    Beteiligte:
    Dehaye, R. (Autor:in) / Ventrice, C. A. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1987-03-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




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