Proposed improvement for silicon crystal growing enables rapid heating of melt in vicinity of liquid-solid interface to compensate for decreases in melt temperature, to ensure uniform diameter and composition in ingot. Intended for growing large silicon ingots by Czochralski process, cylindrical single-crystal ingot pulled from molten silicon. Heating confined to small mass near growing crystal.


    Zugriff

    Zugriff über TIB

    Verfügbarkeit in meiner Bibliothek prüfen


    Exportieren, teilen und zitieren



    Titel :

    Fast-Response Heating of Silicon Melts


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    1987-01-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :



    A Fast Auxiliary Defrosting/Heating System

    Renner, Markus / Boltz, Norbert / Koch, Peter | SAE Technical Papers | 1992


    Impact of softener and filler on rheological and dielectric response of elastomer melts

    Stratmann,P. / Moewes,M. / Klueppel,M. et al. | Kraftfahrwesen | 2016


    Growing crystals from eutectic melts

    Bhat, B. N. | NTRS | 1976


    Electrolysis of simulated lunar melts

    Lewis, R. H. / Lindstrom, D. J. / Haskin, L. A. | NTRS | 1985