Alternating layers of GexSi1.x and Si deposited by molecular beam epitaxy. When electric field applied across stack, acts as detector for infrared photons. Device fabricated on silicon substrate together with sophisticated very-large-scale integrated circuitry. Useful for wide range of applications related to robotics, space exploration, and terrestrial surveillance.
Tailorable Infrared Sensing Devices
NASA Tech Briefs ; 10 , 4
1986-07-01
Sonstige
Keine Angabe
Englisch
Property-Tailorable PFCB-Containing Polymers for Wavelength Division Devices
British Library Online Contents | 2006
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