Single-event upsets reduced by use of oversize transistors. Computers made less susceptible to ionizing radiation by replacing bipolar integrated circuits with properly designed, complementary metaloxide-semiconductor (CMOS) circuits. CMOS circuit chips made highly resistant to single-event upset (SEU), especially when certain feedback resistors are incorporated. Redesigned chips also consume less power than original chips.


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    Titel :

    Radiation Hardening of Computers


    Beteiligte:
    Nichols, D. K. (Autor:in) / Smith, L. S. (Autor:in) / Zoutendyk, J. A. (Autor:in) / Giddings, A. E. (Autor:in) / Hewlett, F. W. (Autor:in) / Treece, R. K. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1986-05-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :


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