Immersed heating and cooling elements establish desired temperature gradients. Method envisions use of high-pressure, Czochralski crystalgrowth apparatus as presently employed to grow gallium arsenide and gallium phosphide but modified to accept deep crucibles so deep layers of encapsulant used, plus X-ray or optical or sonic-imaging system to observe growth of crystal submerged in encapsulant. Method especially applicable to horizontal growth of ribbons of compound semiconductors.


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    Titel :

    Growing Single-Crystal Sheets by Controlled Cooling


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    01.04.1984



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :



    Crystal growing

    Schmid, Frederick / Khattak, Chandra P. | NTRS | 1981


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