Technique yields better mixing of impurities and superior qualiity crystals. Accellerated motion stirs melt which reduces temperature gradients and decreases boundary layer for diffusion of impurities near growing surface. Results better mixing of impurities into melt, decrease in tendency for dendritic growth or cellular growth and crystals with low dislocation density. Applied with success to solution growth and Czochralski growth, resulting in large crystals of superior quality.


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    Titel :

    Oscillating-Crucible Technique for Silicon Growth


    Beteiligte:
    Daud, T. (Autor:in) / Dumas, K. A. (Autor:in) / Kim, K. M. (Autor:in) / Schwuttke, G. H. (Autor:in) / Smetana, P. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1984-04-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :


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    Barrier for Continuous-Crystal-Growth Crucible

    Skutch, M. E. / Piotrowski, P. A. | NTRS | 1983



    The Growth of Large-Diametered Nearly Stoichiometric Lithium Niobate Crystals by Double Crucible Technique

    Kong, Y. / Sun, J. / Zhang, L. et al. | British Library Conference Proceedings | 2005