Improved switching transistors handle 400-A peak currents and up to 1,200 V. Using large diameter silicon wafers with twice effective area as D60T, form basis for D7 family of power switching transistors. Package includes npn wafer, emitter preform, and base-contact insert. Applications are: 25to 50-kilowatt high-frequency dc/dc inverters, VSCF converters, and motor controllers for electrical vehicles.


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    Titel :

    High Power Switching Transistor


    Beteiligte:
    Hower, P. L. (Autor:in) / Kao, Y. C. (Autor:in) / Carnahan, D. C. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1983-10-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




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