Process based on organo-metallic chemical vapor deposition (OM/CVD) of trimethyl gallium with arsine forms economical ultrathin GaAs epitaxial films. Process has higher potential for low manufacturing cost and large-scale production compared with more-conventional halide CVD and liquid-phase epitaxy processes. By reducing thickness of GaAs and substituting low-cost substrate for single-crystal GaAs wafer, process would make GaAs solar cells commercially more attractive.


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    Titel :

    Ultra-Thin-Film GaAs Solar Cells


    Beteiligte:
    Wang, K. L. (Autor:in) / Shin, B. K. (Autor:in) / Yeh, Y. C. M. (Autor:in) / Stirn, R. J. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1982-09-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :


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