Report describes effects of power and temperature overstress on National Semiconductor and Raytheon transistors. Good junction quality was maintained. Gain losses predominated. Other failures are reported.
JANTX2N2369A transistor
NASA Tech Briefs ; 5 , 1
1980-08-01
Sonstige
Keine Angabe
Englisch
NTRS | 1980
NTRS | 1980
NTRS | 1980
NTRS | 1980
NTRS | 1980