1,000-volt, 200-ampere gate-assisted turn-off thyristor has been developed for power circuits requiring high efficiency, small size, and low weight. Design features include shunted cathode for high dV/dt capability. Cathode in interdigitated with dynamic gate for fast, low-loss switching. Operating frequency exceeds 20 kHz with overall energy dissipation of less that 12 mJ per pulse for typical 20-microsecond half-sine waveform. Device has turn-on time of 2 microseconds and turn-off time as short as 3 microseconds with only 2 amperes of gate drive.


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    Titel :

    Gate-assisted turn-off thyristor


    Beteiligte:
    Lowry, L. R. (Autor:in) / Page, D. J. (Autor:in) / Schlegel, E. S. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1978-06-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




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