High power InGaAs-GaAs distributed feedback (DFB) lasers with nonabsorbing mirrors have been fabricated with over 200 mW of single frequency CW optical power at 25°C (110 mW at 95°C). Unlike their distributed Bragg reflector counterparts, the DFB devices exhibit relatively linear optical power against current curves. Low threshold currents of ~10 mA were also obtained.
High-power InGaAs-GaAs-AlGaAs distributed feedback lasers with nonabsorbing mirrors
1998-04-30
2 pages
Aufsatz (Zeitschrift)
Englisch
gallium arsenide , distributed feedback lasers , single frequency CW optical power , laser cavity resonators , 10 mA , III-V semiconductors , high-power DFB lasers , aluminium compounds , InGaAs-GaAs-AlGaAs , indium compounds , 25 to 95 C , nonabsorbing mirrors , low threshold currents , 110 to 200 mW , semiconductor lasers , laser mirrors
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