An InP-based monolithically integrated optoelectronic integrated circuit (OEIC), consisting of a 1.55 µm photoreceiver and a laser driver, is demonstrated. The circuit, designed and fabricated with heterojunction bipolar transistors, has a −3 dB bandwidth of 8.1 GHz and bit-error-rate measurements show that the circuit can operate at 10 Gbit/s. The OEIC is tested with a singlemode 1.55 µm laser connected externally.


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    Titel :

    Monolithically integrated 1.55 µm photoreceiver-laser driver optoelectronic integrated circuit


    Beteiligte:
    Pradhan, S. (Autor:in) / Bhattacharya, P. (Autor:in) / Liu, W.K. (Autor:in)

    Erscheinungsdatum :

    2002-08-15


    Format / Umfang :

    3 pages



    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch




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